Semiconductor laser device
文献类型：专利
| 作者 | IWAI, NORIHIRO; FUNABASHI, MASAKI |
| 发表日期 | 2002-10-03 |
| 专利号 | US20020141467A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The semiconductor laser device the n-InP cladding layer, SCH-MQW active layer, p-InP cladding layer, and p-GaInAsP optical waveguide layer are respectively formed into a tapered shape on the n-InP substrate. The combination of oscillation parameters of the tapered shape, the grating pitch of a diffraction grating, an optical waveguide including an active layer, and the length of a resonator are adjusted so that laser beam including two or more oscillating longitudinal modes are output. |
| 公开日期 | 2002-10-03 |
| 申请日期 | 2001-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83954]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IWAI, NORIHIRO,FUNABASHI, MASAKI. Semiconductor laser device. US20020141467A1. 2002-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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