Manufacture of semiconductor laser
文献类型：专利
| 作者 | NAKAO ICHIROU |
| 发表日期 | 1984-12-11 |
| 专利号 | JP1984219974A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a vertical resonator surface through etching by vertically etching an upper clad layer by using a specific etching liquid and sputteringetching an active layer and a lower clad layer. CONSTITUTION:An N type InP clad layer (a lower clad layer) 2, an InGaAsP active layer 3 and a P type InP clad layer (an upper clad layer) 4 are grown on an N type InP substrate SiO2 7 is grown, opening sections are formed, and the clad layer 4 is etched by an etching liquid of HCl:H3PO4=1:4 to form etched sections 9, side surfaces thereof are vertical up to bottoms. SiO2 7 is removed, and the active layer 3 and the lower clad layer 2 are sputtering-etched while using the upper clad layer 4 as a mask by employing CCl4 gas. Si3N4 is deposited, only laser stripe sections are bored, an Au-Zn electrode 6 is evaporated, and an Au-Sn electrode 7 is evaporated. |
| 公开日期 | 1984-12-11 |
| 申请日期 | 1983-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83956]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIROU. Manufacture of semiconductor laser. JP1984219974A. 1984-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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