Semiconductor laser element
文献类型：专利
| 作者 | KURIHARA HARUKI |
| 发表日期 | 1989-06-12 |
| 专利号 | JP1989149499A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent a defective growth generated during a liquid phase crystal growth process so as to improve a manufacturing yield and consequently a productivity by a method wherein the top face of a mesa is composed of a crystal face other than a 100 face of a crystal face. CONSTITUTION:An n-GaAs single crystal layer 22 is formed on a surface of a 100 crystal face of a substrate 21 composed of a P-GaAs single crystal, next a stripe-like primary groove 23 running along a direction of a 001 crystal is formed penetrating the n-GaAs single crystal layer 22, and moreover sub-grooves 30 and 31 are formed on the sides of the stripe-like groove 23 in parallel with it. Next, the surface of the substrate 21 is exposed to a hot atmosphere to make faces of mesa stripes 32 and 33 change to curved faces. A first clad layer 24, an active layer 25, a second clad layer 26, and an ohmic layer 27 are successively laminated on the substrate processed as mentioned above. By these processes, an upper face of a mesa is made to be curved, so that a defective growth often occurred during a manufacturing process of a TMS laser can be prevented. |
| 公开日期 | 1989-06-12 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83958]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI. Semiconductor laser element. JP1989149499A. 1989-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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