Semiconductor laser
文献类型：专利
| 作者 | MIURA SHUICHI; USHIJIMA ICHIRO |
| 发表日期 | 1991-06-27 |
| 专利号 | JP1991151683A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a leakage current upon reverse-biassing by inserting an n type third cladding layer of a lower impurity concentration than an n type second cladding layer between a p type active layer and the n type second cladding layer. CONSTITUTION:A p type InP lower cladding layer 12 as a p type first cladding layer is formed on a p type InP substrate 10, on which layer 12 a p type InGaAsP active layer 14 as a p type active layer is formed, on which layer 14 an n type InP upper cladding layer 16 as an n type second cladding layer is formed via an n type InP layer 50 as an n type third cladding layer. In this case, since the n type third cladding layer 50 of lower impurity concentra tion than the n type second cladding layer is inserted between the p type active layer 14 and the n type second cladding layer 16, a semiconductor layer in contact with high impurity concentration p type active layer formed by impurity diffusion from a p type buried layer all becomes a p type semiconductor layer formed by impurity diffusion from the p type buried layer, whereby a pn junc tion plane liable to produce a tunnel current is prevented from appearing. Here by, a leakage current upon reverse-biassing is reduced. |
| 公开日期 | 1991-06-27 |
| 申请日期 | 1989-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83959]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI,USHIJIMA ICHIRO. Semiconductor laser. JP1991151683A. 1991-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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