Manufacture of semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
| 发表日期 | 1989-12-13 |
| 专利号 | JP1989309391A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To solve a problem of interfacial oxidation during a regrowth operation by o method wherein, after ions have been implanted selectively into a current constriction layer of a multiple-quantum-well structure, a heat treatment is executed and an ion implantation region is etched and removed. CONSTITUTION:A resist pattern 6 is formed by photolithography. Ions of, e.g., Si are implanted into a selected region of a GaAs protective layer 5 and a multiple-quantum-well current constriction layer 4 by making use of the pattern 6 as a mask; an ion implantation part 7 is formed. A high-tempereture heat treatment is executed in an atmosphere of arsine under a reduced pressure inside an identical furnace. The implantation part 7 is removed; a hole 8 as a current path is made in the constriction layer 4. A second-time crystal growth operation is executed by using a molecular beam epitaxial method; a clad layer 9 and a contact layer 10 are grown. Lastly, electrodes are formed on the rear of a substrate and on the contact layer 10. By this setup, a problem of interfacial oxidation during a regrowth operation is solved. |
| 公开日期 | 1989-12-13 |
| 申请日期 | 1988-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83961]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Manufacture of semiconductor laser. JP1989309391A. 1989-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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