Semiconductor laser element and its driving method
文献类型：专利
| 作者 | IKEDA SOTOMITSU; NITTA ATSUSHI; SHIMIZU AKIRA |
| 发表日期 | 1992-06-24 |
| 专利号 | JP1992177784A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its driving method |
| 英文摘要 | PURPOSE:To prevent the change of output position from a laser when wavelength is changed, by arranging light emitting layers of different wavelengths in a single optical waveguide. CONSTITUTION:A light emitting layer 11b of short wavelength lambda2 is formed on an n-type clad layer 3 side. A light emitting layer 11a of long wavelength lambda1 is formed on a p-type clad layer 5 side. As a result, positive holes injected from the clad layer 5 side reach the light emitting layer 11b of short wavelength lambda2, but that is difficult as compared with the case of travelling in the opposite direction. Hence a barrier layer 12 is doped to be a high concentration p-type, thereby previously supplying sufficient positive holes. In the case where sufficient positive holes are previously supplied, the positive holes suitably distribute in both of the light emitting layers 11a, 11b, when a current is not made to flow. Thereby the output position from a laser can be prevented from changing, when the wavelength is changed. |
| 公开日期 | 1992-06-24 |
| 申请日期 | 1990-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83962]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU,NITTA ATSUSHI,SHIMIZU AKIRA. Semiconductor laser element and its driving method. JP1992177784A. 1992-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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