Semiconductor laser
文献类型：专利
| 作者 | SUGIMOTO MITSUNORI |
| 发表日期 | 1989-02-07 |
| 专利号 | JP1989035979A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a preferably etched mirror by dry etching and to apply it to a photoelectric integrated circuit by reducing the height of a ridge stripe at an edge face. CONSTITUTION:A semiconductor layer having an active layer 3 and a clad layer 4 formed on the layer 3, and a protruding ridge stripe 9 formed on the semiconductor layer are provided. Since the height of the stripe is high to 0.5-1mum at the end 9b of the stripe, an irregular dry etching as observed when the height of the stripe is high to 1mum or more is eliminated, and a flat and preferably etched mirror is obtained. Accordingly, since a flat and preferable resonator face is obtained without cleaving, an oscillation threshold current is low, and can be applied to a photoelectric integrated circuit. |
| 公开日期 | 1989-02-07 |
| 申请日期 | 1987-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83965]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI. Semiconductor laser. JP1989035979A. 1989-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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