Manufacture of semiconductor laser element
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU |
| 发表日期 | 1984-02-16 |
| 专利号 | JP1984029486A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a thick electrode layer connecting to the golden ribbon lead to be formed easily by means of a plating process by a method wherein an insulating film is selectively formed on the entire surface of a substrate selectively coated with the insulating film and the backside thereof coated with a gold layer evaporating film to plate the insulating film with a gold layer film excluding the top surface of a mesastriping light emitting region. CONSTITUTION:Several striping grooves 5 with the depth reaching a buffer layer 2 are provided in parallel at specified interval and golden electrode layers 8, 9 are respectively coated to be formed on the surface and back side of a substrate 1 including a selectively formed insulating film 7 excluding the top surface of the divided mesastriping light emitting regions 6 while an oxide insulating film made of SiO2 is patterned selectively coating the specified element separating region to be the boundary between each laser elements to form an insulating film pattern 31 on the electrode layer 9. Several laser elements may be easily formed by means of forming a gold plate layer 32 around several score mum thick with a plating process on the electrode layer 9 and utilizing the insulating film pattern region 31 not gold plated for cleaving each edge parts 33, 34 and 35. |
| 公开日期 | 1984-02-16 |
| 申请日期 | 1982-08-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Manufacture of semiconductor laser element. JP1984029486A. 1984-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。