Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI; FUJII HIROAKI |
| 发表日期 | 1990-07-03 |
| 专利号 | JP1990172287A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To easily control etching at the time of forming a mesa stripe by making a GaInP layer and an AlGaAs layer have a thickness wherein the quantum level becomes larger than the oscillation energy of an active layer. CONSTITUTION:An etching interruption layer is composed of a GaInP layer 8 and an AlGaAS layer 6, and so thin that the light of an active layer 3 is not absorbed. Sufficient function for etching interruption can be obtained by the following manner; not by using composition difference but by using the difference of mixed crystal system, firstly an AlGaInP clad layer 4 is selectively etched for the AlGaAs 6, and then the AlGaAs 6 is selectively etched for the GaInP 8. Thereby the etching at the time of forming a mesa stripe can be easily controlled. |
| 公开日期 | 1990-07-03 |
| 申请日期 | 1988-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI,FUJII HIROAKI. Semiconductor laser device. JP1990172287A. 1990-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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