Semiconductor device and method of manufacturing the same
文献类型：专利
| 作者 | TAKAOKA, KEIJI; KUSHIBE, MITSUHIRO; IZUMIYA, TOSHIHIDE; KOKUBUN, YOSHIHIRO |
| 发表日期 | 1998-10-13 |
| 专利号 | US5822349 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and method of manufacturing the same |
| 英文摘要 | This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8x1017 cm-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other. |
| 公开日期 | 1998-10-13 |
| 申请日期 | 1996-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | TAKAOKA, KEIJI,KUSHIBE, MITSUHIRO,IZUMIYA, TOSHIHIDE,et al. Semiconductor device and method of manufacturing the same. US5822349. 1998-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。