Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | NAKAI SABURO; USHIJIMA ICHIRO |
| 发表日期 | 1990-10-15 |
| 专利号 | JP1990254781A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve a light emitting device of this design in light emitting efficiency and to decrease it in threshold current by a method wherein an active layer is undercut, the side face of a lower clad layer is filled with a certain conductivity type semiconductor layer, and an opposite conductivity type semiconductor layer is grown on the former semiconductor layer to form an inverse bias junction. CONSTITUTION:A double hetero-structure is formed in belt, a clad layer 2 just under an active layer 3 is selectively etched from its side face to narrow, the side face of the clad layer 2 is filled with a certain conductivity type semiconductor layer 6, and an opposite conductivity type semiconductor layer 7 is grown on the layer 6 to form an inverted bias junction. Therefore, when the P-type In layer 6 is epitaxially grown through a liquid growth method, the active layer 3 is undercut just below and the growth of the layer 6 takes place concentrating on the undercut, so that the layer 6 can be easily controlled to be thin near the side face of the active layer 3 and a current constriction layer 7 can be made to approximate to the active layer 3. By this setup, a P-N junction of the current constriction layer with a P-type InP layer 8 is close to the active layer 3, so that a reactive current decreases, a light emitting efficiency is improved, and a threshold current is lessened. |
| 公开日期 | 1990-10-15 |
| 申请日期 | 1989-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83977]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAI SABURO,USHIJIMA ICHIRO. Manufacture of semiconductor light emitting device. JP1990254781A. 1990-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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