Semiconductor laser device
文献类型：专利
| 作者 | YAMAMOTO, SABURO; HOSODA, MASAHIRO; SASAKI, KAZUAKI; KONDO, MASAKI |
| 发表日期 | 1990-12-11 |
| 专利号 | US4977568 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer. |
| 公开日期 | 1990-12-11 |
| 申请日期 | 1988-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83978]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, SABURO,HOSODA, MASAHIRO,SASAKI, KAZUAKI,et al. Semiconductor laser device. US4977568. 1990-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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