Semiconductor light emitting device
文献类型：专利
| 作者 | ISHIKAWA HIROSHI; SUDOU HISAO |
| 发表日期 | 1984-01-10 |
| 专利号 | JP1984004190A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To unify an oscillation axis mode of a semiconductor light emitting device and to reduce the threshold value of the device by providing a groove having periodic irregularity on the side face formed on a semiconductor substrate, a clad layer and an active layer formed in the groove, thereby readily adding DFB, DBR structures. CONSTITUTION:A p type InP semiconductor layer 2 is formed by epitaxial growing method or a gas phase diffusing method on an n type InP semiconductor substrate 1, and then a dioxidized silicon film 3 is formed. The film 3 is then patterned, thereby forming a striped hole 3A. A photoresit film is formed on the overall surface, and pattern exposed by the interference of laser light, thereby forming a periodic fine strip pattern 4. With the pattern 4 as a mask the film 3 is etched, and the pattern 4 used as a mask is removed. With the film 3 as a mask the layer 2 and the substrate 1 are etched to form grooves 5. Then, an n type InP semiconductor layer 6, an InGaAsP active layer 7, a p type InP semiconductor layer 8, and a p type InGaAsP semiconductor layer 9 are sequentially grown, and an irregularity is periodically formed longitudinally on the side face of the layer 7. |
| 公开日期 | 1984-01-10 |
| 申请日期 | 1982-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83979]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ISHIKAWA HIROSHI,SUDOU HISAO. Semiconductor light emitting device. JP1984004190A. 1984-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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