Semiconductor laser
文献类型：专利
| 作者 | UOMI KAZUHISA; KAYANE NAOKI; KAJIMURA TAKASHI; FUKUZAWA TADASHI |
| 发表日期 | 1987-03-19 |
| 专利号 | JP1987062578A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To perform a low threshold current, a high light emitting efficiency and high speed modulation by differentiating in space the semiconductor shape of a multiplex quantum well active layer regarding the laminating direction of the active layer. CONSTITUTION:An N-type GaAs buffer layer 9, an N-type Ga1-xAlxAs clad layer 3, 5 undoped GaAs well layers 1, a multiplex quantum well active layer 10 alternately formed with barrier layer 4 with P-type Ga0.7Al0.3As layer 6 interposed with Ga0.7Al0.3As layers 5, a P-type Ga1-xAlxAs clad layer 5, and an N-type GaAs photoabsorbing layer 11 are sequentially formed by an MOCVD method on an N-type GaAs substrate crystal 9. A groove stripe is formed to expose the layer 4 by photoetching. Then, a P-type Ga1-xAlxAs clad layer 12, a P-type GaAs cap layer 13, a P-type side electrode 14, an N-type side electrode 15 are formed, and then cleaved. Thus, a lateral mode at high sped modulation time is stabilized. |
| 公开日期 | 1987-03-19 |
| 申请日期 | 1985-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83987]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,KAYANE NAOKI,KAJIMURA TAKASHI,et al. Semiconductor laser. JP1987062578A. 1987-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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