Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | HATANO, AKO; OHBA, YASUO |
| 发表日期 | 1997-04-01 |
| 专利号 | US5617438 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5x1018/cm3 of Si. |
| 公开日期 | 1997-04-01 |
| 申请日期 | 1995-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83991]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HATANO, AKO,OHBA, YASUO. Semiconductor laser and method for manufacturing the same. US5617438. 1997-04-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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