Integrated optical semiconductor device
文献类型：专利
| 作者 | KURODA, FUMIHIKO; SUZUKI, NOBUO |
| 发表日期 | 1992-06-09 |
| 专利号 | US5121182 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated optical semiconductor device |
| 英文摘要 | In an integrated optical semiconductor device having an InGaAsP optical waveguide and an InGaAs light absorption layer integrated together therein, the light absorption layer is formed to become gradually thicker in a traveling direction of light in the optical waveguide so that the effective absorption coefficient of the light absorption layer with respect to the optical waveguide can be set to become gradually larger in the traveling direction in the optical waveguide. |
| 公开日期 | 1992-06-09 |
| 申请日期 | 1991-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83992]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | KURODA, FUMIHIKO,SUZUKI, NOBUO. Integrated optical semiconductor device. US5121182. 1992-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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