Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1986-05-06 |
| 专利号 | JP1986088586A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce oscillating threshold currents, and to obtain excellent high- output characteristics by arranging a current constriction function and an index waveguide function so as to hold an active layer from upper and lower sections, separately constituting each function and forming a narrow current path. CONSTITUTION:A P type GaAs buffer layer 2 and an N type GaAs current constriction layer 3 are shaped onto a P type GaAs substrate 1 in succession through a crystal growth process, thus constituting a first crystal laminate. A groove reaching the layer 2 is shaped. A P type GlGaAs layer 4, an AlGaAs layer 5 as an active layer, an N type AlGaAs layer 6 and an N type AlGaAs layer 7 are formed successively, thus constituting a second crystal laminate. A groove reaching the layer 6 is shaped. An N type AlGaAs layer 8 and an N type GaAs layer 9 are formed. According to the constitution, a current constriction function and an index waveguide function are isolated severally, and wide index waveguide structure can be shaped though a narrow current path is formed, thus improving high-output characteristics while acquiring characteristics having a little coherence. |
| 公开日期 | 1986-05-06 |
| 申请日期 | 1984-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83996]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1986088586A. 1986-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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