Optical semiconductor device
文献类型：专利
| 作者 | NITTA ATSUSHI; NISHIMURA MICHIYO |
| 发表日期 | 1992-03-13 |
| 专利号 | JP1992080985A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To enable gain to be easily and widely controlled in wavelength dispersion and to enable an optical semiconductor device to effectively carry out amplification or oscillation by a method wherein active layers different in gain dispersion are formed in a waveguide in parallel as separated from each other so as not to be electrically connected. CONSTITUTION:A semiconductor laser structure is provided, active layers different from each other in gain dispersion are formed in a waveguide along a guide direction partially in parallel as separated from each other so as not to be electrically connected, and an energy feed means used for forming an inverted distribution independent of the active layers is provided. When optical signals guided from the outside are connected to a waveguide layer 3 with lens or the like, the optical signals traveling through a waveguide which contains the waveguide layer 3 are simplified with a first and a second active layer, 2 and 4. That is, in the first active layer 2, a power supply is connected to a first P electrode 11 and a first N electrode 13, whereby a current is made to flow through a path which runs through a first P-type layer 6, a first active layer 2, and a first N-type layer 7, and carriers are injected there to form an inverted distribution to start induced emission. On the other hand, in the second active layer 4, a power supply is connected to a second P electrode 12 and a second N electrode 14 the same as above, whereby an inverted distribution is formed to start induced emission. |
| 公开日期 | 1992-03-13 |
| 申请日期 | 1990-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83998]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | NITTA ATSUSHI,NISHIMURA MICHIYO. Optical semiconductor device. JP1992080985A. 1992-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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