Semiconductor light emitting device
文献类型：专利
| 作者 | MOGI NAOTO; HATAGOSHI GENICHI; WATANABE YUKIO; SHIMADA NAOHIRO |
| 发表日期 | 1988-02-25 |
| 专利号 | JP1988044784A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To provide an effective element structure so that an emission element having a bottleneck structure of internal electric current will be excellent in durability by having a configuration of device where its structure causes an electric current to flow under a dielectric film from an electrode portion and also flow toward a light emitting region. CONSTITUTION:Epitaxial growth treatment are carried out at a clad layer 12, an active layer 13, the clad layer 14 and a current bottleneck layer 15 in sequence on a substrate crystal 11 and a stripe-like groove is formed from the surface of growth layer, having a groove width of 2 mum. At the growth crystal surface, furthermore, an optical waveguide layer 16, the second clad layer 17 and a contact layer 18 are formed and then, at the crystal surface an SiO2 film of 500 Angstrom in thickness is vapor-deposited after the substrate 11 has been ground up to the subscribed thickness, an electrode layer 20 is vapor-deposited. Moreover, the SiO2 film with the exception of its dimensions of 50 mum extending on both sides from a center of the stripe-like groove part is removed with etching treatment to form an electrode barrier layer 19. Furthermore, the electrode layer 21 is formed on the contact layer 18 and supposing that its layer is cut into the prescribed sizes, no outstanding increase in a working current will be found, even though respective operations are performed for one thousand hours or more. Thus, an introduction of the electrode barrier layer prevents incursion of heavy-metal ion and assures an improvement of relability. |
| 公开日期 | 1988-02-25 |
| 申请日期 | 1986-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84006]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,HATAGOSHI GENICHI,WATANABE YUKIO,et al. Semiconductor light emitting device. JP1988044784A. 1988-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。