半導体レ—ザ—
文献类型：专利
| 作者 | 池田 外充 |
| 发表日期 | 1996-06-27 |
| 专利号 | JP2531719B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ— |
| 英文摘要 | PURPOSE:To form a monolithic integrated semiconductor laser in which the required angles of the respective emitting directions of a plurality of laser beams can be realized by a method wherein complex refractive indices on both the sides of an active region are asymmetrical and different from each other over the whole length or at a part of the length between resonance planes. CONSTITUTION:A wafer is composed of a substrate and a lower cladding layer 1a, an active layer 2a and an upper cladding layer 3a formed on the substrate. A resist film 4a is formed on the wafer and, after exposure, the resist 4a on a partial region is removed and that region of the upper cladding region 3a is cut off by RIBE. Then, after the resist film 4a is removed, a resist film 4b is again formed on the upper surface and, after exposure, the resist film 4b on a partial region is removed and that region of the upper cladding layer 3a is cut off. With this method, XRl and XRr of both the sides of a ridge can be controlled. With this constitution, one side and the other side of an active region are made to be gain waveguide type and refractive index waveguide type respectively and the peak of a photoelectric field intensity distribution is shifted to the side where gain waveguide tendency is higher and, further, the wave front is delayed so that stabilization of a lateral mode, suppression of increse of a threshold current and suppression of degradation of external differential quantum efficiency can be maintained and the inclined emission of a laser beam can be achieved. |
| 公开日期 | 1996-09-04 |
| 申请日期 | 1987-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84011]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 外充. 半導体レ—ザ—. JP2531719B2. 1996-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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