Semiconductor laser
文献类型：专利
| 作者 | HIRATANI YUJI; KASHIWA TORU |
| 发表日期 | 1989-12-21 |
| 专利号 | JP1989316986A |
| 著作权人 | 光技術研究開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make a semiconductor protrusion serve as an optical waveguide layer, to decrease a threshold current density, and to facilitate a highly efficient coupling of a semiconductor laser with an optical transmission body by a method wherein a semiconductor protrusion, a hetero-structure, a resonating mirror and others are provided onto a substrate. CONSTITUTION:A high reflecting film 12 formed of a semiconductor multilayer film is formed on a substrate of an InP crystal. A resonating mirror 21 taking advantage of a high reflecting film 12 and a resonating mirror 22 taking advantage of a high reflecting film 18 formed of a dielectric multilayer film are formed on the film 12. A refractive index of a semiconductor protrusion 13 is higher than those of clad layers 14, 16, and 17 and a band gap of the protrusion 13 is wider than that of an active layer 15. By these processes, a threshold current density is decreased and the highly efficient coupling between the laser and an optical transmission body can facilitated. |
| 公开日期 | 1989-12-21 |
| 申请日期 | 1988-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光技術研究開発株式会社 |
| 推荐引用方式 GB/T 7714 | HIRATANI YUJI,KASHIWA TORU. Semiconductor laser. JP1989316986A. 1989-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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