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文献类型:专利
作者 | UKO KATSUYUKI; SAKAI KAZUO; AKIBA SHIGEYUKI; MATSUSHIMA JUICHI |
发表日期 | 1992-01-07 |
专利号 | JP1992000397B2 |
著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To improve the yield of a semiconductor laser by manufacturing a BJB (Butt-Jointed Built-in) structure useful as an integrated laser by one crystal growth, thereby simplifying the manufacturing process. CONSTITUTION:After a photoresist used as a mask is removed, undoped InGaAsP active layers 2, 2' as the first semiconductor layer and P type InP or InGaAsP layers 7, 7' as the second semiconductor layer are grown by liquid phase epitaxial method on an N type InP substrate 1, and further an undoped InGaAsP photowave guide layers 5, 5' as the third semiconductor layer, and undoped INP or InGaAsP layers 8, 8' as the fourth semiconductor layers are sequentially grown continuously. In this case, since the width of mesa is wide, the respective layers are grown on the mesa, and formed separately on and under the mesa. The end of the layer 2' can be made coincident to that of the layer 5 by controlling the growing time of the layers 7, 7'. |
公开日期 | 1992-01-07 |
申请日期 | 1982-06-10 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/84018] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
推荐引用方式 GB/T 7714 | UKO KATSUYUKI,SAKAI KAZUO,AKIBA SHIGEYUKI,et al. -. JP1992000397B2. 1992-01-07. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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