中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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文献类型:专利

作者UKO KATSUYUKI; SAKAI KAZUO; AKIBA SHIGEYUKI; MATSUSHIMA JUICHI
发表日期1992-01-07
专利号JP1992000397B2
著作权人KOKUSAI DENSHIN DENWA CO LTD
国家日本
文献子类授权发明
其他题名-
英文摘要PURPOSE:To improve the yield of a semiconductor laser by manufacturing a BJB (Butt-Jointed Built-in) structure useful as an integrated laser by one crystal growth, thereby simplifying the manufacturing process. CONSTITUTION:After a photoresist used as a mask is removed, undoped InGaAsP active layers 2, 2' as the first semiconductor layer and P type InP or InGaAsP layers 7, 7' as the second semiconductor layer are grown by liquid phase epitaxial method on an N type InP substrate 1, and further an undoped InGaAsP photowave guide layers 5, 5' as the third semiconductor layer, and undoped INP or InGaAsP layers 8, 8' as the fourth semiconductor layers are sequentially grown continuously. In this case, since the width of mesa is wide, the respective layers are grown on the mesa, and formed separately on and under the mesa. The end of the layer 2' can be made coincident to that of the layer 5 by controlling the growing time of the layers 7, 7'.
公开日期1992-01-07
申请日期1982-06-10
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/84018]  
专题半导体激光器专利数据库
作者单位KOKUSAI DENSHIN DENWA CO LTD
推荐引用方式
GB/T 7714
UKO KATSUYUKI,SAKAI KAZUO,AKIBA SHIGEYUKI,et al. -. JP1992000397B2. 1992-01-07.

入库方式: OAI收割

来源:西安光学精密机械研究所

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