Semiconductor laser device
文献类型：专利
| 作者 | KURIHARA, HARUKI; YAMAMOTO, MOTOYUKI |
| 发表日期 | 1995-04-18 |
| 专利号 | US5408488 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprising, a first clad layer of the first conductivity type semiconductor crystal deposited on a first electrode layer, an active layer, a second clad layer formed of a semiconductor crystal of a second conductivity type, a current barrier layer having a stripe-like current inlet opening, a second electrode layer formed of a semiconductor crystal of the second conductivity type, and disposed on the current barrier layer and on the electric current inlet opening. A first electrode is formed on the second electrode layer. A second electrode is formed on the bottom surface of the first electrode layer. Between the current barrier layer and the second clad layer is formed a photoelectric current barrier layer formed of a semiconductor crystal of the first conductivity type having a larger band gap than that of the active layer. |
| 公开日期 | 1995-04-18 |
| 申请日期 | 1994-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84021]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KURIHARA, HARUKI,YAMAMOTO, MOTOYUKI. Semiconductor laser device. US5408488. 1995-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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