Semiconductor light emitting device
文献类型：专利
| 作者 | IKEDA TOSHIYUKI |
| 发表日期 | 1987-11-19 |
| 专利号 | JP1987266889A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve characteristics such as a threshold current value and light emitting efficiency, by arranging projections, which comprise a second semiconductor material and form parallel lines, in contact with a substrate or a semiconductor layer comprising a first semiconductor material, depositing a waveguide layer comprising a third semiconductor material thereon, thereby enhancing the feedback rate of a diffraction grating. CONSTITUTION:On the 100 surface of an N-type InP substrate 1, an InGaAsP layer 2 is grown by liquid phase epitaxy (LPE) and the like. Positive type photoresist, which is applied on the N-type InGaAsP layer 2, is exposed by a two-beams interference method. A resist mask 11 is formed by development. The InGaAsP layer 2 is selectively etched with respect to the InP substrate 1, and projections 2A comprising InGaAsP of lambdag=1mum are formed in parallel lines. The resist mask 11 is removed, and semiconductor layers of a wave filtering layer 3, an active layer 4, a clad layer 5 and a cap layer 6 are formed by the LPE method and the like. A P-type electrode 8, and an N-side electrode 9 are arranged on the active layer of the semiconductor substrate. Chip dividing, end-surface treatment and the like are performed, and a DFB laser element is completed. |
| 公开日期 | 1987-11-19 |
| 申请日期 | 1986-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84025]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IKEDA TOSHIYUKI. Semiconductor light emitting device. JP1987266889A. 1987-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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