Semiconductor laser device
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; ITO KUNIO |
| 发表日期 | 1988-12-12 |
| 专利号 | JP1988304688A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the discharge characteristics of an active layer by a simple manufacturing method and to make it possible to perform a high-output and high- temperature operation by a method wherein a current blocking layer is formed on the part other than the ridge of a substrate having the ridge and a DH structure (a P-type InP clad layer-an InGaAsP active layer-an N-type InP current blocking layer) is formed on the ridge. CONSTITUTION:The P-N junction between an N-type InP current blocking layer 2 and a P-type InP clad layer 3 is brought into a reverse-biased state at the time of operation of a laser and no current flows. Thereby, a current is constricted at a ridge part 7 of a P-type InP substrate 1 and the constricted current is injected in an active layer luminous part 6 to generate laser oscillation. As the periphery of the luminous part 6 is surrounded with InP, the luminous part 6 performs an oscillation in a stable and single transverse mode if it is formed in a width of 2-3mum and a thickness of 0.1-0.2mum or thereabouts. Moreover, the part between the luminous part 6 and the epitaxial surface is all an N-type InP clad layer 5 and a high-output and high- temperature operation can be performed. An InGaAsP active layer 4, which is left by etching and is located on the current blocking layer, prevents the current blocking layer (a thyristor structure) from being broken down at the time of high output. |
| 公开日期 | 1988-12-12 |
| 申请日期 | 1987-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,ITO KUNIO. Semiconductor laser device. JP1988304688A. 1988-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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