Semiconductor device
文献类型：专利
| 作者 | KURODA TAKARO; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-07-09 |
| 专利号 | JP1987154687A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To form an optical waveguide with less optical absorption loss using super lattice structure by doping p-type or n-type impurity in such a degree as about 1X10cm to a part of high purity super lattice which indicates exciton absorption in the neighborhood of band end at a room temperature. CONSTITUTION:After causing the undoped super lattice layer (GaAs, Al0.5Ga0.5 As, respectively 50Angstrom ) sandwiched by the undoped clad layers (Al0.4Ga0.6As)2, 4 to grow by the MBE method or MOCVD method on a GaAs substrate, the Be ion is doped only by 5X10cm in both sides of optical waveguide portion to obtain an optical waveguide. A semiconductor laser is formed by sequentially forming, by the epitaxial growth method, an n-clad Al0.35Ga0.65As layer 2, an undoped active layer 3 corresponding to oscillation wavelength of 0.82nm, a p-clad layer Al0.35Ga0.65As41, a super lattice undoped clad layer 42(GaAs, Al0.5 Ga0.5As), a p-clad Al0.35Ga0.65As43 on an n+GaAs substrate and thereafter the Be ion is doped up to 3X10cm in both sides of the oscillation region. |
| 公开日期 | 1987-07-09 |
| 申请日期 | 1985-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84036]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKARO,MATSUMURA HIROYOSHI. Semiconductor device. JP1987154687A. 1987-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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