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文献类型：专利
| 作者 | OGURA MUTSURO; MUKAI SEIJI |
| 发表日期 | 1990-12-05 |
| 专利号 | JP1990057708B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a vertical oscillation type laser by forming a groove for burying a clad layer in a semiconductor hetero-multilayer film according to a predetermined pattern, burying p- and n-type clad layers and using a held hetero-multilayer film section as an optical resonator in the direction vertical to a substrate functioning as an active layer concurrently. CONSTITUTION:A hetero-multilayer film 21 is shaped on a semi-insulating substrate 10 extending over a wide area, and grooves 22 reading the substrate 10 are formed through selective etching. p-type clad layers 12 are buried through a proper technique. The layer 12 is separated in parallel in the Y direction, and wide and narrow width are repeated alternately in the X direction. Likewide, grooves 23 are formed, and n-type clad layers 13 are buried. Sections 11 among adjacent clad layers 12, 13 constitute optical resonators serving as active layers concurrently, and narrow width W represents the width of the active layer and the thickness L of the hetero-film 21 laser length. A vertical oscillation type laser having high carrier-confinement efficiency and low threshold characteristics is acquired by complete transverse type double-hetero structure. |
| 公开日期 | 1990-12-05 |
| 申请日期 | 1985-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO,MUKAI SEIJI. -. JP1990057708B2. 1990-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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