Semiconductor laser device
文献类型：专利
| 作者 | KONO MASAKI; KIMURA HIDE |
| 发表日期 | 1990-08-14 |
| 专利号 | JP1990205091A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the device to be oscillated at low threshold currents by forming an n-type or p-type conductivity type contact layer only at the specified region above a luminous part and forming the p-type or n-type conductivity type second current checking layer and the second contact layer at the regions excluding this. CONSTITUTION:The n-GaAs first current checking layer 2, the first clad layer 3, an active layer 4, the second clad layer 5, and the first contact layer 4, the second layer 5, and the first contact layer 6 are crystal-grown in order on a P-GaAs substrate 1, and then the first contact layer 6 is etched down to the interface with the second clad layer 5 excluding the specified region above a luminous part. Thereafter, the second current checking layer 7 and the second contact layer 8 are grown on the whole face by vapor growth. Next, the second current checking layer 7 and the second contact layer 8, which are formed in projections, are etched and the surface is flattened. At this time, the second current checking layer 7 at the projection is completely etched. Thereafter, a p-side electrode 9 and a side electrode 10 are formed. |
| 公开日期 | 1990-08-14 |
| 申请日期 | 1989-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI,KIMURA HIDE. Semiconductor laser device. JP1990205091A. 1990-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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