Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | SANADA TATSUYUKI |
| 发表日期 | 1987-12-04 |
| 专利号 | JP1987279689A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting device of the type for enclosing a lateral light by selectively diffusing Zn or Si in a multiplex quantum well made of a GaAs film and an AlGaAs film to be disordered. CONSTITUTION:A P type GaAs buffer layer 2, a P-type AlGaAs clad layer 3, an MQW active layer 4 made of a GaAs film and an AlGaAs film, an N-type AlGaAs optical guide layer 5, an MQW guide layer 6 made of an N-type GaAs film and an N-type AlGaAs film, an N-type AlGaAs clad layer 7 and an N type GaAs cap layer 8 are sequentially grown on a P type GaAs substrate 1 by a molecular beam epitaxially growing method. The aluminum composition of the optical guide layer is grated to be gradually reduced toward a surface side, the clad layer formed thereon is composed of A GaAs, the aluminum composition is graded to be gradually reduced toward a surface side, and Zn or Si is thereafter selectively introduced so as to disorder the part except a current path in the optical guide layer. |
| 公开日期 | 1987-12-04 |
| 申请日期 | 1986-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84041]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI. Manufacture of semiconductor light emitting device. JP1987279689A. 1987-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。