Manufacture of semiconductor laser
文献类型：专利
| 作者 | UEDA OSAMU |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061085A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an active layer buried type semiconductor laser with ease and good yield by a method wherein a layer composed of a material different from that of a semiconductor substrate is formed in a groove of the semiconductor substrate and then made to remain only inside the groove. CONSTITUTION:A pattern mask layer 14' is formed by providing a stripe formed aperture through an SiO2 film, and successively the V-shaped stripe groove 15 is formed. After removing the stripe mask 14', an InGaAsP layer 21 is grown. Etching is performed down to the line of S-S. The V-shaped stripe groove 15a having a narrow groove width is obtained by removing the remaining InGaAsP layer by selective etching. Further, an N-InP clad layer, an N-InGaAsP active layer, a P-InP clad layer, and a P-InGaAsP contact layer are successively grown. |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU. Manufacture of semiconductor laser. JP1984061085A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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