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文献类型：专利
| 作者 | FUJIWARA MASAHIKO |
| 发表日期 | 1993-10-29 |
| 专利号 | JP1993078810B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain an optical bistable semiconductor element which operates even with a high-speed light signal by forming a light emitting element on the same substrate with an optical bistable semiconductor laser which has a current unapplied area and a current applied area in a resonator closely to the current unapplied area. CONSTITUTION:The DH substrate formed by laminating an n-InP buffer layer 11, an InGaAsP active layer 12, and a p-InP clad layer 13 on an n-InP substrate 10 is etched to form a wafer. Then, the 1st p-InP current block layer 14, the 2nd n-InP current block layer 15, a p-InP buried layer 16, and a p-InGaAsP cap layer 17 are formed successively and two grooves 22 and 23 for forming a mesa stripe 20 converting the active layer 12 are formed at a wide part 24 and a narrow part 25. The current blocks are not grown on the stripe 20 at the wide part 24 as shown in figure (b), but as shown at the in figure (c) at the narrow part 25. Then, Cd is diffused at part 29 of a flat part close to the narrow part 25 to form a current path penetrating the current block layers 14 and 15, the cap layer 17 of AuZn is formed thereafter, and electrodes 26, 27, 30, and 28 are stuck. |
| 公开日期 | 1993-10-29 |
| 申请日期 | 1984-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASAHIKO. -. JP1993078810B2. 1993-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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