Semiconductor laser element
文献类型：专利
| 作者 | KAYANE NAOKI; UOMI KAZUHISA; FUKUZAWA TADASHI; KONO TOSHIHIRO; NAKATSUKA SHINICHI; ONO YUICHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-03-10 |
| 专利号 | JP1987054990A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an astigmatism by increasing the exciting intensity of laser light at the periphery from the center of a stripe in a region near one emitting end and the intensity largest at the center of the stripe in the region except the emitting end. CONSTITUTION:An N-type Ga1-xAlxAs clad layer 2, a P-type Ga1-yAlyAs active layer 3, a P-type Ga1-xAlxAs clad layer 4 an P-type GaAs cap layer 6 are sequentially formed on an N-type GaAs substrate Then, a striped region 9 remains, and proton is implanted to a region 10. Thereafter, a Cr-Au electrode 7, an AuGeNi-Au electrode 8 are deposited, and an element is separated. Since a current flows in a stripe shape except a region near the right end of the element, it is of gain waveguide type. However, since the wavy surface becomes curved and no current flows at the center of the stripe in the region near the right end, a gain distribution becomes of reverse waveguide structure. Thus, a noise is small in a longitudinal multimodes, and small astigmatism in a semiconductor laser. |
| 公开日期 | 1987-03-10 |
| 申请日期 | 1985-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84052]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,UOMI KAZUHISA,FUKUZAWA TADASHI,et al. Semiconductor laser element. JP1987054990A. 1987-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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