Manufacture of mask semiconductor laser
文献类型：专利
| 作者 | IDE YASUSHI; HARIGAI MASATO; KOBAYASHI HIROSHI; MACHIDA HARUHIKO |
| 发表日期 | 1990-09-05 |
| 专利号 | JP1990222587A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of mask semiconductor laser |
| 英文摘要 | PURPOSE:To protect a mask by a protective film and to enhance a semiconductor laser in output by a method wherein a light prohibiting mask is formed on a light projecting face of the semiconductor laser, and a part of the mask is removed or made transparent to form a light projecting hole of a pinhole. CONSTITUTION:The light projecting face of a semiconductor laser 1 is coated with an SiN film of a thickness of lambda/2 as an insulating layer. lambda is the wavelength of laser rays of the laser In succession, an optical shielding mask 2 is formed on the insulating layer through a vacuum evaporation method. Then a protective film 3 is formed on the mask 2 through a vacuum evaporation method the same as above. The protective film 3 makes SiO serve as an evaporation material and is determined to have a thickness of D, where D satisfies a formula D=lambda/4n, and makes the reflectively of the output end face of the laser approximate to zero, and n denotes the refractive index of the protective film 3. In succession, a light projecting hole 4 is formed at a center. By this setup, the mask 2 is protected against oxidation and the semiconductor laser 1 can be increased in output by 40% or more as compared with a conventional one provided with no protective mask 3. |
| 公开日期 | 1990-09-05 |
| 申请日期 | 1989-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84056]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | IDE YASUSHI,HARIGAI MASATO,KOBAYASHI HIROSHI,et al. Manufacture of mask semiconductor laser. JP1990222587A. 1990-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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