Semiconductor laser
文献类型：专利
| 作者 | MUTO YUHEI; GENEI KOUICHI |
| 发表日期 | 1987-10-15 |
| 专利号 | JP1987235792A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a window structure TJS semiconductor laser having good temperature characteristic and high reliability of oscillating wavelength by forming a periodic uneven portion at least at part of the side of a second clad layer of an optical guide layer, and laminating an organic metal vapor grown layer or a molecular beam epitaxial layer on the top of the optical guide layer. CONSTITUTION:A first conductivity type first clad layer 2 made of group III-V elements, an active layer 3, an optical guide layer 5 and a second clad layer 7 are sequentially laminated on a semi-insulating semiconductor substrate 1, and parts of the layers continuously arrive at a semi-insulating semiconductor substrate 1, and has first and second conductivity types in the layers. In such a semiconductor laser, a periodic uneven portion 6 is formed at least at part of the side of the layer 7 of the layer 5, and an organic metal vapor growth layer or a molecular beam epitaxial layer is laminated on the top of the layer 5. For example, an N-type Ga0.5Al0.34As first clad layer 2. an N-type Ga0.45Al0.12 As active layer 3, a barrier layer 4, an N-type Ga0.45Al0.35SA optical guide layer 5. a diffraction grating 6, and an N-type Ga0.55Al0.45As second clad layer 7 are formed on the substrate l. |
| 公开日期 | 1987-10-15 |
| 申请日期 | 1986-04-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MUTO YUHEI,GENEI KOUICHI. Semiconductor laser. JP1987235792A. 1987-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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