Semiconductor laser element
文献类型：专利
| 作者 | MAKINO TOSHIHIKO; IAN MAAGATSUTOROIDO; IWASE MASAYUKI |
| 发表日期 | 1989-11-15 |
| 专利号 | JP1989283892A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To simply output a laser output light in a direction perpendicular to a semiconductor substrate by providing an end face having a light emitting section perpendicular to the face of the substrate and inclined at approx. 45 deg. to the substrate at the face perpendicular to the guiding direction of an active layer. CONSTITUTION:A laser resonator is formed between the end face 9 of the laser resonator perpendicular to the face of a semiconductor substrate 1 and an emitting unit 12 of the surface of a cap layer 5 of the uppermost layer of an epitaxially grown layer. An inner mirror is formed of a 45 deg. undercut face 13, and the cutting angle theta of this face, i.e., an angle formed between this face and the surface perpendicular to the layer 5 is theta=35 deg. + or -x deg. (x<20). Since the refractive index of a semiconductor layer is -3.3 and that of an outer medium (normally the air) is -4, reflection coefficients at the end 14 of the active layer is near 1 for TE and TM waves to be totally reflected. Thus, a surface light emitting type semiconductor laser element in which an output light is output perpendicularly to the face of the substrate by the inner mirror is obtained. |
| 公开日期 | 1989-11-15 |
| 申请日期 | 1988-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84070]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | MAKINO TOSHIHIKO,IAN MAAGATSUTOROIDO,IWASE MASAYUKI. Semiconductor laser element. JP1989283892A. 1989-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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