Semiconductor laser
文献类型:专利
作者 | NARUI HIRONOBU; OHATA TOYOJI; MORI YOSHIFUMI |
发表日期 | 1990-08-01 |
专利号 | JP1990194688A |
著作权人 | SONY CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To obtain a semiconductor laser having a small junction capacitance and to make possible the high-speed operation of the laser by a method wherein a crystallographic etching and the specificity of an epitaxial growth are utilized and an operating region is selectively formed on an inverse mesa type protrusion. CONSTITUTION:First conductivity type first, second and third semiconductor layers 31, 32 and 33, which are respectively grown as an epitaxially grown layer, are laminated on a compound semiconductor substrate 22 with an inverse mesa type protrusion part 21 formed on it. Then, a second conductivity type fourth semiconductor layer 34, a first conductivity type fifth semiconductor layer 35 and a second conductivity type sixth semiconductor layer 6 are laminated on this layer 33, but at this time, the respective layers 31 to 34 are laminated in such a way that the growth layers on the part 21 and in mesa grooves 23 on both sides of the part 21 are separated from each other. Moreover, the layer 35 is constituted in such a way that its end parts on the side of the part 21 come into contact to the end surfaces, which are located on the part 21, of the layer 31 and the end surfaces, which are located on the part 21, of the layer 32 are brought into contact to the layer 36 over their whole thicknesses to generate a heterojunction 24. A laser is constituted in such a way and carriers are injected from the junction part 24 in the direction of the surface of the layer 32. |
公开日期 | 1990-08-01 |
申请日期 | 1989-01-24 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/84073] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORP |
推荐引用方式 GB/T 7714 | NARUI HIRONOBU,OHATA TOYOJI,MORI YOSHIFUMI. Semiconductor laser. JP1990194688A. 1990-08-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。