Manufacture of semiconductor laser element
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
| 发表日期 | 1990-11-28 |
| 专利号 | JP1990288283A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element equipped with an internal current constriction layer and refractive index distribution by applying gas source MBE method for formation of an active layer part and an internal current constriction layer and next using the MOCVD method. CONSTITUTION:For a silicon substrate 1, the one which has a face orientation of (100) and is off-angled about 3 deg. in the orientation of (011) is used, the after forming a film for buffer of CaAs by doing gas source MBE, an n-type AlCaAs clad layer 4, a CaAs active layer 4, and a p-type AlCaAs clad layer 5 are grown selectively in order on a stripe 12 by MOCVD method, whereupon the stripe is formed of an active layer part whose cross section being surrounded by face (111)B CaAs is triangle. Next, when a mask 2 is removed and gas source MBE is done again, a CaAs thin layer for buffer whose crystal orientation is rotated 90 deg. is formed, and when a p-type AlCaAs clad layer 6 is grown in two stages by MOCVD, the formation of the growth layer becomes the face surrounded by the face (100), the face (111)A CaAs and face (111)B GaAs. As a result, and internal current constriction layer and refractive index distribution can be made. |
| 公开日期 | 1990-11-28 |
| 申请日期 | 1989-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Manufacture of semiconductor laser element. JP1990288283A. 1990-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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