半導体レーザ装置
文献类型：专利
| 作者 | 吉沢 みすず; 山下 茂雄; 大石 昭夫; 梶村 俊 |
| 发表日期 | 1997-05-30 |
| 专利号 | JP2656482B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To improve the reliability of a semiconductor laser device and to improve the yield of an element by reducing the aluminum molar ratio of a semiconductor which forms the clad layer in the bottom of a stripe smaller than that of a semiconductor which forms the other clad layer. CONSTITUTION:An N-type clad layer 2, an active layer 3, a P-type clad layer 4, and an N-type GaAs current narrowing layer 5 are sequentially formed on a substrate crystal Thereafter, the layer 5 is removed to form a groove stripe having 1-15mum of width exposed on the layer 4. Then, a P-type buried clad layer 6, and a P-type cap layer 7 are formed. The aluminum molar ratio of the P-type GaAlAs clad layer exposed at the time of forming the groove stripe is reduced smaller than that of the N-type GaAs clad layer to eliminate the oxide on the exposed surface in the atmosphere at the time of forming the stripe. Accordingly, the oxide is not formed to obtain high yield and high reliability. |
| 公开日期 | 1997-09-24 |
| 申请日期 | 1987-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 吉沢 みすず,山下 茂雄,大石 昭夫,等. 半導体レーザ装置. JP2656482B2. 1997-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。