Semiconductor laser element
文献类型：专利
| 作者 | KIMURA SOUICHI |
| 发表日期 | 1985-04-13 |
| 专利号 | JP1985064487A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain laser beams of a wavelength with a very favorable unity by a method wherein grooves are formed by performing an etching, which penetrates an isolating layer from the surface of a multilayer epitaxial layer and parts between the mutually adjoining grooves are respectively used as a resonator. CONSTITUTION:A compound semiconductor waveguide passage layer 3, which has a larger refractive index than that of a substrate 1 and has a same conductive type as that of the substrate 1, is formed on the compound semiconductor substrate A compound semiconductor isolating layer 4, which has a smaller refractive index than that of the waveguide passage layer 3 and has a same conductive type as that of the waveguide passage layer 3, is formed on the waveguide passage layer 3. Multilayer epitaxial layers 5-7, which have respectively grown a double-hetero junction layer, are formed on the isolating layer 4. Etching grooves 10, which penetrate the isolating layer 4 from the surface of the epitaxial layer 7, are formed. Parts between the mutually adjoining grooves 10 are respectively used as a resonator and a plural number of short resonator lasers 11 are formed. By this constitution, laser beams of a single mode made to oscillate from the lasers 11 are conducted into the conductive waveguide 3 through the isolating layer 4. The laser beams are coupled with laser beams made to oscillate from other parts, the coupled laser beams become laser beams of a single wavelength and are emitted to the outside from the conductive waveguide 3. |
| 公开日期 | 1985-04-13 |
| 申请日期 | 1983-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84082]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KIMURA SOUICHI. Semiconductor laser element. JP1985064487A. 1985-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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