Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293690A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an operating voltage and to obtain an oscillation in a fundamental transverse mode over a wide range by a method wherein a substrate is constituted of Si and a buffer layer used to relax a discrepancy of a lattice constant is formed at an interface between Si and a compound semiconductor. CONSTITUTION:An n-type Si current-constricting layer 2 is formed on a p-type Si substrate 1; after that, a groove is formed by etching. Then, a buffer layer 3 constituted of one or several p-type AlGaAs layers is formed in order to relax a discrepancy of a lattice constant between AlGaAs and Si. In succession, a p-type clad layer 4, an active layer 5, an n-type clad layer 6 and an n-type contact layer 7 are formed. By this setup, a regrowth interface becomes flat; an oscillation in a fundamental transverse mode can be maintained over a wide range. In addition, an operating voltage can be lowered. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84083]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO. Semiconductor laser. JP1989293690A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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