Semiconductor laser device
文献类型：专利
| 作者 | HATAKOSHI, GENICHI; ITAYA, KAZUHIKO; NARITSUKA, SHIGEYA; ISHIKAWA, MASAYUKI; OKUDA, HAJIME; SHIOZAWA, HIDEO; WATANABE, YUKIO; OHBA, YASUO; KOKUBUN, YOSHIHIRO; UEMATSU, YUTAKA |
| 发表日期 | 1991-07-30 |
| 专利号 | US5036521 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities: 0.015.DELTA.sup.1/2 |
| 公开日期 | 1991-07-30 |
| 申请日期 | 1989-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84084]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HATAKOSHI, GENICHI,ITAYA, KAZUHIKO,NARITSUKA, SHIGEYA,et al. Semiconductor laser device. US5036521. 1991-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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