Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA KOUJI |
| 发表日期 | 1984-10-27 |
| 专利号 | JP1984189693A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device, which generates a laser beam, whose cross-sectional shape is a true circle, by constituting a striped shape waveguide by protruded parts of upper and lower clad layers and a part held by them, and changing the shape of the upper clad layer. CONSTITUTION:The band gap of an upper clad layer 12 is lowered. Difference in refractive indexes is made small. Upward expansion of light is made large. The light is confined by an upper outer clad layer 11, whose refractive index is further small. Thus, a light emitting spot, which is expanded in the vertical direction, and a light emitting point 10 in a true circle shape are obtained. The light can be confined in a wide region by two clad layers, which are the upper clad layer 12 having a protruded part 13 and the upper outer clad layer 11 on both outer parts of the protruded part 13. The upper outer clad layer 11 has many carriers different from those of the upper clad layer 12 and a cap layer 8 and has a large band gap. Therefore the layer 11 works as a current blocking layer. Supply of carriers into a rhombus stripe comprising a V shaped groove part 9, the protruded part 13, and a part of an active layer 2 between them is effectively performed. |
| 公开日期 | 1984-10-27 |
| 申请日期 | 1983-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84088]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA KOUJI. Semiconductor laser device. JP1984189693A. 1984-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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