Surface emitting type semiconductor laser
文献类型：专利
| 作者 | UCHIDA MAMORU |
| 发表日期 | 1990-03-30 |
| 专利号 | JP1990090691A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a surface emitting type semiconductor laser which is excellent in reproducibility, small in operating current, and high in output power by a method wherein a multilayer compound semiconductor layers are laminated on a compound semiconductor substrate, and a hetero-structure containing an active layer is formed on the side face perpendicular to the base of the multilayer semiconductor layer. CONSTITUTION:The following are laminated only on the side face etched through a gas source MBE method using an organic metal gas as a source which is capable of executing selective growth: an n-type AlAs buffer layer 105; an n-type Al0.3Ga0.7As clad layer 106; a p-type AlGaAs active layer 107; a p-type Al0.3Ga0.7As clad layer 108, and a GaAs cap layer 109. Lastly, an n-electrode 110 and a p-electrode 111 are built on an n-type GaAs cap layer 104 and a p-type GaAs cap layer 109 respectively after an SiO2 film has been removed. In result, carriers injected into a pn junction formed in a lateral direction are recombined in the active layer 107 and propagate as being confined in the active layer, but a part of light leads out to the n-type clad layer 106 and reaches to a multilayer film 103. At this point, the multilayer film 103 acts as a Bragg reflecting mirror, so that laser light is outputted in a planar direction. |
| 公开日期 | 1990-03-30 |
| 申请日期 | 1988-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84090]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UCHIDA MAMORU. Surface emitting type semiconductor laser. JP1990090691A. 1990-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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