Semiconductor laser
文献类型：专利
| 作者 | NODA SUSUMU; KOJIMA KEISUKE; ARANISHI TOSHIO; HISAMA KAZUO |
| 发表日期 | 1987-12-22 |
| 专利号 | JP1987295480A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a manufacturing process by providing an active layer made of a quantum well structure, and limiting a current injection region to a part of a laser to form the active layer of a laser unit and an optical guide layer for optically feeding back of the same layer. CONSTITUTION:A buffer layer 3, a lower clad layer 4, a quantum well layer 5, a barrier layer 6, a guide layer 7 executed with a diffraction grating 17 are sequentially formed from above of a substrate 1 provided with a lower electrode 1b. The central projected strip of a dielectric layer 11 is formed of a subclad layer 8, an upper clad layer 9a, and a cap layer 10. Here, the electrode 1a is provided only on a region 12a near the end of a laser, a current injection is limited only to the region 12a, and a region 13a is of a non current injection unit. A ridge guide structure is formed as a lateral light confinement structure. |
| 公开日期 | 1987-12-22 |
| 申请日期 | 1986-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84093]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NODA SUSUMU,KOJIMA KEISUKE,ARANISHI TOSHIO,et al. Semiconductor laser. JP1987295480A. 1987-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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