Liquid phase epitaxial growth apparatus
文献类型：专利
| 作者 | KUME ICHIRO; TANAKA TOSHIO |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248520A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth apparatus |
| 英文摘要 | PURPOSE:To form even epitaxial layers by a method wherein, when melted solution channels in parallel with the surface of a slider for substrate wafer comprising a liquid phase epitaxial growth apparatus are provided to fix the substrate wafers on the ceiling and bottom of the channel before melted solution passing through the channel is flowed into a waste solution reservoir, a partition is erected to pool the waste melted solution. CONSTITUTION:A slider 1 for semiconductor wafers comprising a liquid phase eqitaxial growth apparatus is formed of a vertical channel receiving melted solution 7, a horizontal channel connecting to the vertical channel, a connecting channel vertically bent at the end and a horizontal discharging channel connecting to the vertically bent channel. In such a constitution of the slider 1, a pair of substrates 2 are fixed by holding the first horizontal channel, and then different kinds of melted solution are successively flowed from multiple melted solution reservoirs 4 mounted above the slider 1 to the vertical channel to laminate specified multiple layers. At this time, a partition 9 is erected on the waste solution reservoir 8 side of discharge channel so that the waste solution may be temporarily pooled to equalize the temperature distribution on the substrates 2, later making the waste solution flow over the partition 9 into the waste solution reservoir 8. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84097]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUME ICHIRO,TANAKA TOSHIO. Liquid phase epitaxial growth apparatus. JP1986248520A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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