Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | ANAYAMA CHIKASHI |
| 发表日期 | 1992-02-18 |
| 专利号 | JP1992048669A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To acquire a good semiconductor laser device of good efficiency with adequate current confinement by providing a III-V compound semiconductor layer which buries a periphery of a projecting part of a fourth clad layer above the projecting part of a III-V compound semiconductor substrate. CONSTITUTION:A pGaAs substrate 10 is provided with a pAl0.45Ga0.55As clad layer 12 which is doped with Zn only on a plane surface in a periphery of a stripe and a surface (100) of an upper surface. A p(Al0.7Ga0.3)0.5 In0.5P clad layer 14 doped with Mg all over, an undoped Ga0.5In0.5P active layer 16, and an Se-doped n(Al0.7Ga0.3)0.5In0.5P clad layer 18 are laminated in a uniform thickness. An nAl0.45Ga0.55As clad layer 20 which is doped with Zn only on a surface (100) of the clad layer 18 is formed and an undoped nAl0.45 Ga0.55As high resistance buried layer 22 is formed only on a surface (100) in a periphery of a stripe. As a result, it is possible to confine a current only in a stripe part and to acquire a semiconductor laser device of good efficiency. |
| 公开日期 | 1992-02-18 |
| 申请日期 | 1990-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84100]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ANAYAMA CHIKASHI. Semiconductor laser device and its manufacture. JP1992048669A. 1992-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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