Semiconductor laser device
文献类型：专利
| 作者 | SHONO, MASAYUKI; HIROYAMA, RYOJI; KOMEDA, KOUJI; NISHIDA, TOYOZO; BESSHO, YASUYUKI |
| 发表日期 | 2000-03-28 |
| 专利号 | US6044099 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom. |
| 公开日期 | 2000-03-28 |
| 申请日期 | 1997-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84101]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHONO, MASAYUKI,HIROYAMA, RYOJI,KOMEDA, KOUJI,et al. Semiconductor laser device. US6044099. 2000-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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