Semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218086A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To form insulator current constriction layers continuously by the use of the same device as that for forming respective semiconductor layers, by using substances having the same or similar compositions as those of respective semiconductor layers for the current constriction layers after importing high resistance through adequate doping. CONSTITUTION:A P-type AlxGa1-xAs (0<=x<=1) clad layer I 2, an AlyGa1-yAs (0<=y<=1) 3, an N-type AlxGa1-xAs (0<=x<=1) clad layer II 4, an N-type GaAs contact layer 5, a high resistance AlzGa1-zAs (0<=z<=1) current bottleneck layer 6, and a stripe like groove 9 are formed on a P-type GaAs substrate The current bottleneck layer 6 is formed by doping impurities such as O2 or H2O and the like. When positive or negative voltage is impressed to a P-type side electrode 7 or an N-type side electrode 8 respectively, the current does not flow in a region where the high resistance current bottleneck layer 6 is positioned between the electrodes 7 and 8 and then, the current flow is centered at only vicinity of the stripe like groove 9. In such a case, respective electrons and hole are injected from the clad layers I and II 2 and 4 to produce laser oscillations. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84103]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1989218086A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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