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文献类型：专利
| 作者 | TODOROKI SATORU; UCHIDA HISATOSHI |
| 发表日期 | 1987-12-07 |
| 专利号 | JP1987058679B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a laser device which has high output and continues stable basic lateral mode by burying in advance the periphery of a striped projection of N type light and carrier enclosing layer formed on an N type semiconductor substrate with the same semiconductor crystal as the substrate and forming striped grooves. CONSTITUTION:An N type Ga1-xAlxAs layer 2 is formed on the (100) surface of an N type GaAs film 1, an Al2O3 mask 3 is covered, the layer 2 is chemically etched, and a projection of the prescribed width is formed. The recess which surrounds the projection is buried with N type GaAs 4 which has the same carrier density and mobility as the substrate The mask 4 is removed, an N type Ga1-xAlxAs 5, N or P type Ga1-xAlyAs active layer 6 and a P type Ga1-xAlxAs 7 and a GaAs cap 8 are continuously epitaxially grown in liquid phase while slightly melting back the surface of the layer 4 with Ga unsaturation solution containing As. Then, an ohmic contact layer 9 is formed by the diffusion of Zn reaching part of the layer 7 through the layer 8 corresponding to the layer 2, and electrodes of Cr alloy 10 and GeNi alloy 11 are attached, thereby completing the device. |
| 公开日期 | 1987-12-07 |
| 申请日期 | 1982-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84106]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,UCHIDA HISATOSHI. -. JP1987058679B2. 1987-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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