Semiconductor laser
文献类型：专利
| 作者 | FUKUZAWA, TADASHI; MATSUMURA, HIROYOSHI; TSUJI, SHINJI; NAKAMURA, HITOSHI; HIRUMA, KENJI |
| 发表日期 | 1987-09-30 |
| 专利号 | EP0177221A3 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A distributed feedback semiconductor laser has gain producing regions formed by superlattice regions (5) separated by semiconductor regions (4) with a greater band gap, and which are transparent to laser radiation. These regions are between guide layers (3,7) which in turn are between cladding layers (2.8) of the semiconductor laser. The semiconductor regions (4) of greater band gap are preferably formed by disordering superlattice regions by diffusing or implanting an impurity therein, as this permits them to be formed with little lattice damage. The result is a semiconductor which oscillates in a single longitudinal mode, has a low threshold current, and exhibits a good mode stability against reflected light. |
| 公开日期 | 1987-09-30 |
| 申请日期 | 1985-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84112]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | FUKUZAWA, TADASHI,MATSUMURA, HIROYOSHI,TSUJI, SHINJI,et al. Semiconductor laser. EP0177221A3. 1987-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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